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| TO-220 Plastic Package TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C Boca Semiconductor Corp. TIP31, 31A, 31B, 31C TIP32, 32A, 32B, 32C General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR (BSC) NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS 31 32 max. 40 max. 40 max. max. max. max. min. max. 31 32 max. 40 max. 40 max. 31A 31B 32A 32B 60 80 60 80 3.0 40 150 1.2 10 50 31A 31B 32A 32B 60 80 60 80 5.0 31C 32C 100 100 31C 32C 100 100 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 375 mA D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE All dim insions in m m . K V V A W C V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO V V V http://www.bocasemi.com page: 1 TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C Collector current Collector current (Peak) Base current Total power dissipation upto TC=25C Derate above 25C Total power dissipation upto T A=25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30V IB = 0; VCE = 60V VBE = 0; VCE = VCEO(max) Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 3 A; IB = 375 mA Base emitter on voltage IC = 3 A; VCE = 4 V D.C. current gain IC = 1 A; VCE = 4 V IC = 3 A; VCE = 4 V Small-signal current gain IC = 0.5A; VCE = 10V; f = 1 KHz Transition frequency IC = 0.5A; VCE = 10V; f = 1 MHz IC ICM IB Ptot Ptot Tj Tstg Rth j-c Rth j-a max. max. max. max. max max. max max. 3.0 5.0 1.0 40 0.32 2 0.016 150 -65 to +150 3.125 62.5 A A A W W /C W W /C C C C W / C W / 31 31A 31B 31C 32 32A 32B 32C ICEO ICEO ICES IEBO VCEO(sus)* VCBO VEBO VCEsat* VBE(on)* hFE* hFE* |h fe | fT (1) max. 0.3 max. - max. max. min. 40 min. 40 min. max. max. min. min. max. min. min. 60 60 0.3 - - 0.3 0.2 1.0 80 80 100 100 - 0.3 mA mA mA mA V V V V V 5.0 1.2 1.8 25 10 50 20 3 MHz * Pulse test: pulse width 300 s; duty cycle 2%. (1) fT = |hfe|* ftest http://www.bocasemi.com page: 2 |
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